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The (SmxGa1−x)2O3 alloy system is a potential new dielectric for compound semiconductors such as GaAs. Using molecular beam epitaxy under metal-modulated growth conditions, we grew the binary oxide, Sm2O3, at two substrate temperatures (100 and 500 °C) and optimized the structural, morphological, and electrical properties of the films. Decreasing the Sm cell temperature suppressed the formation of the monoclinic phase and promoted the growth of the cubic phase. Next, the ternary oxide, (SmxGa1−x)2O3, was deposited to investigate the effects of Ga incorporation. Optimization experiments were used to determine the effects of substrate temperature and samarium cell temperature (i.e., growth rate) on film stoichiometry, phase distribution, and microstructure in these films. Films grown at 500 °C showed significant surface roughness and the presence of multiple crystalline phases. Since all of the Sm-based oxides (i.e., samarium oxide with and without gallium) were found to have unbonded Sm metal, annealing experiments were carried out in oxygen and forming gas to determine the effects of annealing on film stoichiometry. The motivation behind annealing in forming gas was to see whether this commonly used technique for reducing interface densities could improve the film quality. GaAs metal-oxide-semiconductor diodes with (SmxGa1−x)2O3 showed breakdown fields at 1 mA/cm2 of 4.35 MV/cm, which decreased with increasing Sm unbonded metal content in the films. 

(Sc 2 O 3 ) x (Ga 2 O 3 ) 1−x was grown by molecular beam epitaxy at low temperatures (100 °C) using a variety of growth sequences to avoid surface segregation of Ga. Continuous and digital growth techniques always produced Ga segregation. This surface segregation was attributed to the stronger bond between the Sc and O compared to the Ga and O. A digital growth technique (alternate opening of Sc and Ga shutters with the O shutter open continuously during the growth) was unsuccessful in eliminating this effect. The segregation was eliminated using a growth technique in which the Ga shutter was closed for a set amount of time toward the end of the growth while the O and Sc shutters remained open. Characterization with reflection high energy electron diffraction, x-ray diffraction, and transmission electron microscopy revealed the growth of a fine-grained polycrystalline film under these conditions. A third growth technique was used that involved closing the Ga shutter for a set amount of time toward the end of the growth while the O and Sc shutters were open continuously. This technique was successful in depositing a uniform film. However, the breakdown field was only 1.40 MV/cm (at 1 mA/cm 2 ). The addition of Ga to Sc 2 O 3 diminished the insulating properties of the film. These initial experiments indicate that phase segregation is likely to be a major issue with most growth techniques and that alloying Ga 2 O 3 with elements other than Sc, such as Gd or Al, might be a more successful approach. 

The characteristics of sputtered NiO for use in pn heterojunctions with Ga2O3 were investigated as a function of sputtering parameters and postdeposition annealing temperature. The oxygen/ nickel and Ni2O3/NiO ratios, as well as the bandgap and resistivity, increased as a function of O2/Ar gas flow ratio. For example, the bandgap increased from 3.7 to 3.9 eV and the resistivity increased from 0.1 to 2.9 Ω cm for the O2/Ar ratio increasing from 1/30 to 1/3. By sharp contrast, the bandgap and Ni2O3/NiO ratio decreased monotonically with postdeposition annealing temperatures up to 600 °C, but the density of films increased due to a higher fraction of NiO being present. Hydrogen is readily incorporated into NiO during exposure to plasmas, as delineated by secondary ion mass spectrometry measurements on deuterated films. The band alignments of NiO films were type II-staggered gaps with both α- and β-Ga2O3. The breakdown voltage of NiO/β-Ga2O3 heterojunction rectifiers was also a strong function of the O2/Ar flow ratio during deposition, with values of 1350 V for 1/3 and 830 V for 1/30. 

Our ability to visualize and quantify the internal structures of objects via computed tomography (CT) has fundamentally transformed science. As tomographic tools have become more broadly accessible, researchers across diverse disciplines have embraced the ability to investigate the 3D structure-function relationships of an enormous array of items. Whether studying organismal biology, animal models for human health, iterative manufacturing techniques, experimental medical devices, engineering structures, geological and planetary samples, prehistoric artifacts, or fossilized organisms, computed tomography has led to extensive methodological and basic sciences advances and is now a core element in science, technology, engineering, and mathematics (STEM) research and outreach toolkits. Tomorrow's scientific progress is built upon today's innovations. In our data-rich world, this requires access not only to publications but also to supporting data. Reliance on proprietary technologies, combined with the varied objectives of diverse research groups, has resulted in a fragmented tomography-imaging landscape, one that is functional at the individual lab level yet lacks the standardization needed to support efficient and equitable exchange and reuse of data. Developing standards and pipelines for the creation of new and future data, which can also be applied to existing datasets is a challenge that becomes increasingly difficult as the amount and diversity of legacy data grows. Global networks of CT users have proved an effective approach to addressing this kind of multifaceted challenge across a range of fields. Here we describe ongoing efforts to address barriers to recently proposed FAIR (Findability, Accessibility, Interoperability, Reuse) and open science principles by assembling interested parties from research and education communities, industry, publishers, and data repositories to approach these issues jointly in a focused, efficient, and practical way. By outlining the benefits of networks, generally, and drawing on examples from efforts by the Non-Clinical Tomography Users Research Network (NoCTURN), specifically, we illustrate how standardization of data and metadata for reuse can foster interdisciplinary collaborations and create new opportunities for future-looking, large-scale data initiatives.